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AAV003-10E Current Sensor
External Magnetic Fields and Hysteresis Effects
The AAV003-10E sensor elements are shielded to make them insensitive to external magnetic fields,
however, shielding is not 100% effective, so external fields applied to the sensor should be avoided for the
most repeatable, accurate operation.
When exposed to magnetic fields over 50 Oe (5 mT), the characteristic of the sensor can be disturbed,
causing a hysteresis effect that will produce a non-linear response. A magnetic field of 50 Oe is a large field
that should not be encountered during normal operation. However, in case the sensor is exposed to such a
field, a degauss pulse train can be applied to the sensor to restore the original response. The sensor cannot be
permanently damaged by any magnetic field, no matter how large and it can always be restored after
exposure to a large field with a degauss signal.
This same effect can be observed when a large constant current (>200 mA) is applied to the on-chip current
strap, or a smaller constant current (>100 mA) at high temperatures (>85°C). Again in these cases, correct
operation of the sensor is restored with a degauss signal.
The degauss signal should consist of at least four current pulses of alternating polarity, with a pulse width of
at least 50 μs and an initial current pulse of 600 mA:
Typical Degauss Pulse
900
750
600
450
300
150
0
Minimum Duration at Peak
50 μ s
-150
100
200
300
400
500
-300
-450
-600
Time ( μ s)
Temperature Characteristics
Typical output over temperature is shown in the graph below:
AAV003 ‐ 10E ? O utput ? over ? Temperature ? ‐? Typic al
0.200
0.150
0.100
0.050
0.000
‐ 0.050
‐ 0.100
‐ 0.150
‐ 0.200
‐ 0.5
‐ 0.4
‐ 0.3
‐ 0.2
‐ 0.1
0
0.1
0.2
0.3
0.4
0.5
O n ‐ C hip ? S trap ? C urrent ? (A)
‐ 50
‐ 20
25 ? C
85 ? C
125 ? C
NVE Corporation
?
11409 Valley View Road, Eden Prairie, MN 55344-3617
?
(952) 829-9217
?
www.nve.com
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